Download Advances in CMP Polishing Technologies by Toshiro Doi, Ioan D. Marinescu, Syuhei Kurokawa PDF

By Toshiro Doi, Ioan D. Marinescu, Syuhei Kurokawa

ISBN-10: 1437778593

ISBN-13: 9781437778595

CMP and sharpening are the main distinct techniques used to complete the surfaces of mechanical and digital or semiconductor parts. Advances in CMP/Polishing applied sciences for Manufacture of digital units provides the newest advancements and technological options within the box – making state of the art R&D obtainable to the broader engineering group.

Most of the functions of those methods are saved as private as attainable (proprietary information), and particular information aren't noticeable in expert or technical journals and magazines. This e-book makes those procedures and functions obtainable to a much wider commercial and educational audience.

Building at the basics of tribology – the technology of friction, put on and lubrication – the authors discover the sensible functions of CMP and sharpening throughout a variety of industry sectors. as a result of the excessive speed of improvement of the electronics and semiconductors undefined, some of the provided procedures and functions come from those industries.

  • Demystifies clinical advancements and technological suggestions, commencing them up for brand new purposes and technique advancements within the semiconductor and different parts of precision engineering
  • Explores inventory removing mechanisms in CMP and sprucing, and the demanding situations focused on predicting the results of abrasive strategies in high-precision environments
  • The authors compile the most recent suggestions and examine from the us and Japan

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Extra resources for Advances in CMP Polishing Technologies

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This has been postulated to be due to elastohydrodynamic interactions between the highly viscous slurry (either oil or ethylene glycol base) and the axially moving semi-compliant wire under tension. We have developed an elastohydrodynamic model which will relate the slurry film thickness to the slurry viscosity and the wire speed. As a first approximation the slurry is considered as a Newtonian fluid and the situation is modeled as a slider bearing. To analyze this situation, the customary Reynold’s equation from lubrication theory needs to be solved, along with the elasticity equation for a wire under tension, with the crystal being approximated as rigid.

The work pieces are held in position by steel or plastic carriers, and sandwiched between two rotating plates. Usually, the plates rotate in opposite directions. The slurry is fed through holes in the top plate to the interface. 26). 27. 27 Schematic of double-sided lapping machine the lower wheel. A center inner pin ring driving device rotates the carriers in an epicyclic motion. A stationary outer ring confines the epicyclic motion of the carrier. The carriers are always thinner than the work pieces and hold the surfaces of the work piece to be machined against the lap and abrasive in an ever-changing pattern.

Strengthening the tension significantly improves the machining groove width because wire electrode vibration decreases. • WEDM gives a particular geometry to poly-silicon material. 4 Wire Electrolytic-Spark Hybrid Machining Research over the last decade has merely verified that low resistance silicon ingots can be sliced by the WEDM method. The unique advantages of a long cutting edge (maximal cutting edge . 05 mm), a small cutting taper and a homogeneous surface for producing thinner and larger scale wafers have not been 32 Advances in CMP/Polishing Technologies sufficiently explored, so this research and development has not made the transition from the laboratory into production processes in the photovoltaic and microelectronics industries.

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